Method of manufacturing flash memory

ABSTRACT

The present invention forms a protection layer of doped amorphous silicon or amorphous silicon on a semiconductor substrate in which a control gate is formed in a stack structure of doped poly Si and etches only a given portion of the protection layer in a subsequent process to form a contact hole. Therefore, the present invention can prevent oxidization of a given portion of WSix due to exposed WSix.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The invention relates generally to a method of manufacturing a flash memory. More particularly, the invention relates to a method of manufacturing a flash memory capable of preventing oxidization of a given portion of WSix due to exposed WSix, in a way that a protection layer of doped amorphous silicon or amorphous silicon is formed on a semiconductor substrate in which a control gate is formed in a stack structure of doped poly Si and only a given portion of the protection layer is then etched in a subsequent process to form a contact hole.

[0003] 2. Description of the Prior Art

[0004] Recently, a commercial flash device mainly includes a structure in which a control gate is formed in a stack structure of doped poly Si and WSix, an metal line and a contact plug for connecting the control gate and the metal line in order to give a device operating voltage are formed.

[0005] Explaining in short a method of manufacturing a flash device, a non-reflection layer and an insulating layer are sequentially deposited on a semiconductor substrate in which a control gate is formed in a stack structure of doped poly Si and WSix. The non-reflection layer and the insulating layer are then patterned by a given etching process to form a contact hole through which WSix can be exposed. Thereafter, after an anti-diffusion film is formed on the entire structure including the contact hole, the contact hole is filled with tungsten plug. Then, a metal line and a barrier layer are sequentially deposited on the entire structure and are then patterned.

[0006] Upon formation of the contact hole, however, a given portion on an upper surface of WSix is exposed to oxygen by a given etching process. Then, the exposed portion of WSix and oxygen react to produce tungsten oxide such as WO₃ or WO on an upper surface of WSix. That is, as shown in FIG. 1, upon formation of the contact hole, tungsten oxide is formed between the anti-diffusion film and the WSix layer by means of given etching process.

[0007] The thickness of tungsten oxide is increased by means of a subsequent process so that tungsten oxide remains between WSix and the anti-diffusion film. Thus, there is a problem that a contact resistance between WSix ad the anti-diffusion film is increased to reduce the operating speed of the device.

[0008] Further, as shown in FIG. 2, in a higher-integrated flash device of 0.18 μm, a seam is generated within WSix, which causes to increase Rs of the control gate. The seam is a result of weaken growth interface of WSix exposed to oxygen during a high temperature oxide film formation process for supplementing a cell side wall since portions where different crystal directions meet by the difference of WSix deposition direction (or crystal growth direction) depending on the morphology after forming WSix. Thus, there is a problem that short of the control gate is caused.

SUMMARY OF THE INVENTION

[0009] It is therefore an object of the present invention to provide a method of manufacturing a flash memory capable of preventing exposure of a given portion of a control gate, when a contact hole in which a contact plug will be formed is formed.

[0010] Another object of the present invention is to provide a method of manufacturing a flash memory capable of preventing exposure of a given portion of a control gate, in a way that the protection layer of doped amorphous silicon or amorphous silicon is formed on a semiconductor substrate in which a control gate is formed in a stack structure of doped poly Si and only a given portion of the protection layer is then etched in a subsequent process to form a contact hole.

[0011] In order to accomplish the above object, a method of manufacturing a flash memory according to the present invention, is characterized in that it comprises the steps of forming a control gate on semiconductor substrate in which given structures are formed; forming a protection layer on the control gate; forming a non-reflection layer on the protection layer; forming an insulating layer on the non-reflection layer; forming a contact hole to expose a given portion of the protection layer; forming a first metal protection film on the entire structure including the contact hole; forming a contact plug to fill the contact hole; forming a second metal protection film on the contact plug; and forming a metal line on the entire structure including an ohmic contact layer.

BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The aforementioned aspects and other features of the present invention will be explained in the following description, taken in conjunction with the accompanying drawings, wherein:

[0013]FIG. 1 is a TEM photography taken the cross-sectional view of a conventional flash memory;

[0014]FIG. 2 is a TEM photography taken a seam formed in WSix;

[0015]FIGS. 3A through 3C are cross-sectional views of a flash memory sequentially shown to explain a method of manufacturing the flash memory according to one embodiment of the present invention; and

[0016]FIG. 4 is a TEM photography taken the cross-sectional view of a conventional flash memory according to one embodiment of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

[0017] The present invention will be described in detail by way of a preferred embodiment with reference to accompanying drawings, in which like reference numerals are used to identify the same or similar parts.

[0018]FIGS. 3A through 3C are cross-sectional views of a flash memory sequentially shown to explain a method of manufacturing the flash memory according to one embodiment of the present invention.

[0019] Referring now to FIG. 3A, a tunnel oxide film and a floating gate are deposited on a given portion of a semiconductor substrate 1 and are then patterned.

[0020] The semiconductor substrate 1 is cleaned by a cleaning solution in which the first mixture solution of HF and H₂O mixed at the ratio of 50:1 or 100:1 and the second mixture solution of NH₄OH, H₂O₂ and H₂O mixed in a given ratio are mixed in a given ratio.

[0021] The tunnel oxide film is formed by performing wet oxidization at the temperature of 750˜800° C. and then performing a thermal process at the temperature of 900˜910° C. under N₂ gas atmosphere for 20˜30 minutes.

[0022] The floating gate is formed in thickness of 500˜1500 Å at the temperature of 550˜620° C. under the pressure of 0.1˜3 Torr under Si gases such as SiH₄ or Si₂H₆ and PH₃ gas atmosphere.

[0023] Thereafter, the entire top structure including the floating gate is cleaned by a cleaning solution in which a first mixture solution of HF and H₂O mixed at the ratio of 50:1 or 100:1 and a second mixture solution of NH₄OH, H₂O₂ and H₂O mixed in a given ratio are mixed in a given ratio.

[0024] Then, a first dielectric film (not shown) of a hot temperature oxide (HTO) is formed on the entire structure using SiH₂Cl₂ and N₂O gas as a source having a good time dependent dielectric breakdown characteristic (TDDB) at the temperature of 810˜850° C. under the pressure of 0.1˜0.5 Torr.

[0025] Next, a second dielectric film (not shown) is formed on the first dielectric film under gas atmosphere in which NH₃ and SiH₂Cl₂ are mixed in a given ratio. At the same time, a third dielectric film (not shown) of a hit temperature oxide (HTO) is formed at the temperature of 810˜850° C. under the pressure of 0.1˜0.5 Torr using SiH₂Cl₂ and N₂O gas having a good TDDB characteristic as a source.

[0026] Thereafter, the entire top structure is experienced by a thermal process using vapor at the temperature of 750˜790° C. by wet oxidization method in order to improve the characteristic of each of the dielectric films and enhance an interface characteristic.

[0027] Then, a silicon layer 2 is formed on the entire structure. The silicon layer 2 is formed in thickness of 500˜1000 Å at the ratio of amorphous silicon and amorphous silicon of 5:1˜7:1 by depositing doped amorphous silicon at the temperature of 510˜550° C. under the pressure of 0.1˜1 Torr under Si gas such as SiH₄ or Si₂H₆ and PH₃ gas atmosphere and then depositing amorphous silicon only under Si gas atmosphere.

[0028] Next, the entire top structure including the silicon layer 2 is cleaned by a cleaning solution in which the first mixture solution of HF and H₂O mixed in a given ratio and the second mixture solution of NH₄F and HF mixed in a given ratio are mixed in a given ratio.

[0029] Thereafter, WSix 3 is formed on the entire structure including the silicon layer 2. WSix 3 is formed in thickness of 500˜2000 Å at the stoichiometry of 2.0˜2.8 capable of implementing an adequate step coverage and minimizing Rs using reaction of low F, low post annealed stress and good adhesive strength SiH₂Cl₂ and WF₆ at the temperature of 300˜600° C.

[0030] Then, doped amorphous silicon or amorphous silicon is in-situ deposited on the entire top structure including WSix 3 in the same deposition or is ex-situ deposited in a different deposition equipment including a preprocessing cleaning process, thus forming a protection layer 5.

[0031] In case that the doped amorphous silicon is deposited in-situ, the protection layer 5 is formed in thickness of 200˜500 Å at the temperature of 550˜650° C. under the pressure of 1˜3 Torr under a gas atmosphere in which Si₂H₆ and PH₃ are mixed at the ratio of 1.0:1.5˜1.5:2.0 or in which SiH₄ and PH₃ are mixed at the ratio of 1.0:1.5˜1.5:2.0.

[0032] On the other hand, in case that doped amorphous silicon or amorphous silicon is deposited ex-situ, WSix 3 is deposited by a preprocessing process and is then experienced by a cleaning process using a cleaning solution in which H₂SO₄ and H₂O₂ are mixed in a given ratio, a cleaning solution in which NH₄OH, H₂O₂ and H₂O are mixed in a given ratio and a cleaning solution in which HF and H₂O are mixed in a given ratio or a cleaning solution in which NH₄F and HF are mixed in a given ratio in order to remove particles or a native oxide film existing on its upper surface.

[0033] In case that amorphous silicon is deposited ex-situ, the protection layer 5 is formed in thickness of 200˜500 Å with Si source gas of 100˜2000 sccm implanted and PH₃ of 50˜200 sccm implanted at the temperature of 460˜550° C. under the pressure of 0.1˜3 Torr under a gas atmosphere in which Si₂H₆ and PH₃ are mixed in a given ratio or SiH₄ and PH₃ are in a given ratio.

[0034] Thereafter, the entire top structure including the protection layer 5 is cleaned by a cleaning solution in which H₂SO₄ and H₂O₂ are mixed in a given ratio.

[0035] Then, a non-reflection layer 6 is formed in thickness of 300˜1500 Å on the entire top structure using SiH₄, N₂O, N₂ or He. In addition, a SiO_(x)N_(y) thin film having a low reflectivity and an adequate refractive index may be formed in thickness of 300˜1500 Å on the non-reflection layer 6.

[0036] Next, a thin insulating layer 7 formed of a thin film of a series of an oxide film using TEOS or DCS or an oxide film using PSG, BPSG or SOG is formed on the entire structure including the non-reflection layer 6.

[0037] Then, the insulating layer 7 and the non-reflection layer 6 are etched to expose a given portion of the protection layer 5 by means of a given etching process, thus forming a contact hole 8.

[0038] Thereafter, the entire top structure including the contact hole 8 is cleaned by a cleaning solution in which HF and H₂O are mixed in a given ratio or in which NH₄F and HF are mixed in a given ratio.

[0039] Referring now to FIG. 3B, a first metal protection film 9 having a stack structure of Ti and TiN is formed on the entire structure.

[0040] Then, W is deposited to fill the contact hole 8 and is then patterned to form a contact plug 10. At the same time, a second metal protection film 11 having a stack structure of Ti and TiN is formed on the contact plug 10.

[0041] Referring now to FIG. 3C, a metal line 12 of Al and a third metal protection film 13 having a stack structure of Ti and TiN are sequentially formed on the entire structure including an ohmic contact layer 11.

[0042] As mentioned above, the present invention sequentially deposits a protection layer of doped amorphous silicon or amorphous silicon, a non-reflection layer and an insulating layer on a given portion of a semiconductor substrate in which a control gate is formed in a stack structure of doped poly Si and WSix.

[0043] The insulating layer and the non-reflection layer are then patterned by a given etching process so that the protection layer can be exposed, thus forming a contact hole. Next, after forming a first metal protection film on the entire structure including the contact hole, a contact plug and a second metal protection film are sequentially formed to fill contact hole. Thereafter, a metal line and a third metal protection film are sequentially deposited on the entire structure and are then patterned.

[0044] That is, after forming the protection layer on WSix, only a given portion of the protection layer is etched. Thus exposure of WSix can be prevented and oxidization of an upper surface of the protection layer can be thus prevented. Therefore, as shown in FIG. 4, a seam generated within WSix can be prevented to thus form WSix of a constant shape.

[0045] As can be understood from the above description, the present invention can prevent oxidization of a given portion of WSix due to exposed WSix by forming a protection layer of doped amorphous silicon or amorphous silicon on a semiconductor substrate in which a control gate is formed in a stack structure of doped poly Si and WSix and only a given portion of the protection layer is then etched in a subsequent process to form a contact hole.

[0046] Therefore, an interface characteristic of the contact plug formed in a subsequent process and WSix is improved to reduce a contact resistance and to simultaneously prevent a seam of the interior of WSix.

[0047] The present invention has been described with reference to a particular embodiment in connection with a particular application. Those having ordinary skill in the art and access to the teachings of the present invention will recognize additional modifications and applications within the scope thereof.

[0048] It is therefore intended by the appended claims to cover any and all such applications, modifications, and embodiments within the scope of the present invention. 

What is claimed are:
 1. A method of manufacturing a flash memory, comprising the steps of: forming a control gate on semiconductor substrate in which given structures are formed; forming a protection layer on said control gate; forming a non-reflection layer on said protection layer; forming an insulating layer on said non-reflection layer; forming a contact hole to expose a given portion of said protection layer; forming a first metal protection film on the entire structure including said contact hole; forming a contact plug to fill said contact hole; forming a second metal protection film on said contact plug; and forming a metal line on the entire structure including an ohmic contact layer.
 2. The method of manufacturing a flash memory according to claim 1, said given structure is a structure in which said semiconductor substrate is cleaned by a cleaning solution in which a first mixture solution of HF and H₂O mixed at the ratio of 50:1 or 100:1 and a second mixture solution of NH₄OH, H₂O₂ and H₂O mixed in a given ratio are mixed in a given ratio, and a tunnel oxide film, a floating gate and a dielectric layer are sequentially formed.
 3. The method of manufacturing a flash memory according to claim 2, wherein said tunnel oxide film is formed by performing wet oxidization at the temperature of 750˜800° C. and then performing a thermal process at the temperature of 900˜910° C. under a N₂ gas atmosphere for 20˜30 minutes.
 4. The method of manufacturing a flash memory according to claim 2, wherein said floating gate is formed in thickness of 500˜1500 Å at the temperature of 550˜620° C. under the pressure of 0.1˜3 Torr under Si gases such as SiH₄ or Si₂H₆ and PH₃ gas atmosphere.
 5. The method of manufacturing a flash memory according to claim 2, wherein after forming said floating gate, said dielectric layer is cleaned by a cleaning solution in which a first mixture solution of HF and H₂O mixed at the ratio of 50:1 or 100:1 and a second mixture solution of NH₄OH, H₂O₂ and H₂O mixed in a given ratio are mixed in a given ratio.
 6. The method of manufacturing a flash memory according to claim 5, wherein said dielectric layer is formed in a stack structure of: a first dielectric film formed at the temperature of 810˜850° C. under the pressure of 0.1˜0.5 Torr under a SiH₂Cl₂ and N₂O gas atmospheres, a second dielectric film formed under a gas atmospheres in which NH₃ and SiH₂Cl₂ are mixed in a given ratio on said first dielectric film, and a third dielectric film formed at the temperature of 810˜850° C. under the pressure of 0.1˜0.5 Torr under a SiH₂Cl₂ and N₂O gas atmospheres on said second dielectric film.
 7. The method of manufacturing a flash memory according to claim 1, wherein said semiconductor substrate is experienced by a thermal process using vapor at the temperature of 750˜790° C. by means of wet oxidization method.
 8. The method of manufacturing a flash memory according to claim 1, wherein said control gate is formed of a stack structure of a silicon layer and WSix.
 9. The method of manufacturing a flash memory according to claim 8, wherein said silicon layer is formed in thickness of 500˜1000 Å at the ratio of amorphous silicon and amorphous silicon of 5:1˜7:1 by depositing doped amorphous silicon at the temperature of 510˜550° C. under the pressure of 0.1˜1 Torr under Si gas such as SiH₄ or Si₂H₆ and PH₃ gas atmosphere and then depositing amorphous silicon only under a Si gas atmosphere.
 10. The method of manufacturing a flash memory according to claim 8, wherein said WSix is formed in thickness of 500˜2000 Å at the stoichiometry of 2.0˜2.8, by cleaning the entire structure including said silicon layer by means of a cleaning solution in which a first cleaning solution mixed in which HF and H₂O are mixed in a given ratio and a second cleaning solution in which NH₄F and HF are mixed in a given ratio are mixed in a given ratio and then processing the entire structure using reaction of low F, low post annealed stress and good adhesive strength SiH₂Cl₂ and WF₆ at the temperature of 300˜600° C.
 11. The method of manufacturing a flash memory according to claim 1, said protection layer is formed by depositing in-situ doped amorphous silicon or amorphous silicon deposited in the same deposition or depositing ex-situ in a different deposition equipment including a preprocessing cleaning process.
 12. The method of manufacturing a flash memory according to claim 11, wherein in case that said doped amorphous silicon is deposited in-situ, said protection layer is formed in thickness of 200˜500 Å at the temperature of 550˜650° C. under the pressure of 0.1˜3 Torr under a gas atmosphere in which Si₂H₆ and PH₃ are mixed at the ratio of 1.0:1.5˜1.5:2.0 or in which SiH₄ and PH₃ are mixed at the ratio of 1.0:1.5˜1.5:2.0.
 13. The method of manufacturing a flash memory according to claim 11, wherein in case that said amorphous silicon or said amorphous silicon are deposited ex-situ, the entire structure including said WSix is experienced by a cleaning process using a cleaning solution in which H₂SO₄ and H₂O₂ are mixed in a given ratio, a cleaning solution in which NH₄OH, H₂O₂ and H₂O are mixed in a given ratio and a cleaning solution in which HF and H₂O are mixed in a given ratio or a cleaning solution in which NH₄F and HF are mixed in a given ratio
 14. The method of manufacturing a flash memory according to claim 11, wherein in case that said amorphous silicon is deposited ex-situ, said protection layer is formed in thickness of 200˜500 Å with Si source gas of 100˜2000 sccm implanted and PH₃ of 50˜200 sccm implanted at the temperature of 460˜550° C. under the pressure of 0.1˜3 Torr under a gas atmosphere in which Si₂H₆ and PH₃ are mixed in a given ratio or SiH₄ and PH₃ are in a given ratio.
 15. The method of manufacturing a flash memory according to claim 1, wherein said non-reflection layer is formed in thickness of 300˜1500 Å by cleaning the entire top structure including said protection layer using a cleaning solution in which H₂SO₄ and H₂O₂ are mixed in a given ratio by means of SiH₄, N₂O, N₂ or He.
 16. The method of manufacturing a flash memory according to claim 15, wherein a SiO_(x)N_(y) thin film is formed in thickness of 300˜1500 Å on said non-reflection layer.
 17. The method of manufacturing a flash memory according to claim 1, wherein said insulating layer is formed of a thin film of a series of an oxide film using TEOS or DCS or an oxide film using PSG, BPSG or SOG.
 18. The method of manufacturing a flash memory according to claim 1, wherein, said first metal protection film is cleaned using a cleaning solution in which HF and H₂O are mixed in a given ratio or a cleaning solution in which NH₄F and HF are mixed in a given ratio and is then formed in a stack structure of Ti and TiN.
 19. The method of manufacturing a flash memory according to claim 1, wherein said contact plug is formed of W.
 20. The method of manufacturing a flash memory according to claim 1, wherein said metal line is formed of Al.
 21. The method of manufacturing a flash memory according to claim 1, wherein a third metal protection film of a stack structure of Ti and TiN is formed on said metal line 